Analysis of quantum efficiency of high brightness GaInN/GaN quantum wells

摘要: To optimize the quantum efficiency a detailed study of loss processes in GaInN/GaN QWs is necessary. Therefore Ga1−xInxN/GaN wells (QWs) were grown under various conditions and investigated by photoluminescence (PL) high-resolution X-ray diffraction (HRXRD). The internal at room temperature was determined from dependence integrated PL intensity. We influence QW width on efficiency. dependent efficiencies analyzed determining relevant thermal activation energies these associated to three limiting temperature: carrier confinement, excitonic binding, and, least important, localisation. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)