Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes
作者： Frank Mehnke , Christian Kuhn , Joachim Stellmach , Tim Kolbe , Neysha Lobo-Ploch
DOI: 10.1063/1.4921439
关键词: Quantum well 、 Materials science 、 Photoluminescence 、 Depletion region 、 Optoelectronics 、 Quantum efficiency 、 Electroluminescence 、 Wide-bandgap semiconductor 、 Light-emitting diode 、 Heterojunction
摘要: The effects of the heterostructure design on injection efficiency and external quantum ultraviolet (UV)-B light emitting diodes (LEDs) have been investigated. It was found that functionality AlxGa1−xN:Mg electron blocking layer is strongly influenced by its aluminum mole fraction x magnesium doping profile. By comparing LED electroluminescence, well photoluminescence, simulations heterostructure, we were able to differentiate contributions internal UV LEDs. For optimized using an Al0.7Ga0.3N:Mg with a Mg group III ratio 4% in gas phase leakage currents are suppressed without holes into multiple active region. Flip chip mounted chips processed achieving maximum output power 3.5 mW at 290 mA peak 0.54%...
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