The improvement of deep-ultraviolet light-emitting diodes with gradually decreasing Al content in AlGaN electron blocking layers
作者： Yuanwen Zhang , Lei Yu , Kai Li , Hui Pi , Jiasheng Diao
DOI: 10.1016/J.SPMI.2015.02.004
关键词:
摘要: … region as well as the alleviation of band bending in the EBL/p-… In this paper, the influence of AlGaN based DUV-LEDs with … The results show that the band bending in the AlGaN EBL …
harvard.edu
elsevier.com
sci-hub.se 参考文章(24)
Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto, An aluminium nitride light-emitting diode with a wavelength of 210 nanometres Nature. ,vol. 441, pp. 325- 328 ,(2006) , 10.1038/NATURE04760
J Lee, X Li, X Ni, Ü Özgür, Hadis Morkoç, T Paskova, G Mulholland, KR Evans, None, On carrier spillover in c- and m-plane InGaN light emitting diodes Applied Physics Letters. ,vol. 95, pp. 201113- ,(2009) , 10.1063/1.3266833
Sheng-Horng Yen, Yen-Kuang Kuo, Polarization-dependent optical characteristics of violet InGaN laser diodes Journal of Applied Physics. ,vol. 103, pp. 103115- ,(2008) , 10.1063/1.2937247
I. Vurgaftman, J. R. Meyer, L. R. Ram-Mohan, Band parameters for III–V compound semiconductors and their alloys Journal of Applied Physics. ,vol. 89, pp. 5815- 5875 ,(2001) , 10.1063/1.1368156
J Stellmach, A Knauer, H Rodriguez, S Einfeldt, Z Yang, N M Johnson, M Weyers, M Kneissl, T Kolbe, C Chua, V Kueller, N Lobo, Advances in group III-nitride-based deep UV light-emitting diode technology Semiconductor Science and Technology. ,vol. 26, pp. 014036- ,(2011) , 10.1088/0268-1242/26/1/014036
Yinjun Zhang, Simon Gautier, Chu-Young Cho, Erdem Cicek, Zahra Vashaei, Ryan McClintock, Can Bayram, Yanbo Bai, M. Razeghi, Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111) Applied Physics Letters. ,vol. 102, pp. 011106- ,(2013) , 10.1063/1.4773565
Vincenzo Fiorentini, Fabio Bernardini, Oliver Ambacher, Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures Applied Physics Letters. ,vol. 80, pp. 1204- 1206 ,(2002) , 10.1063/1.1448668
Joachim Piprek, Z. M. Simon Li, Origin of InGaN light-emitting diode efficiency improvements using chirped AlGaN multi-quantum barriers Applied Physics Letters. ,vol. 102, pp. 023510- ,(2013) , 10.1063/1.4776739
Min-Ho Kim, Martin F. Schubert, Qi Dai, Jong Kyu Kim, E. Fred Schubert, Joachim Piprek, Yongjo Park, Origin of efficiency droop in GaN-based light-emitting diodes Applied Physics Letters. ,vol. 91, pp. 183507- ,(2007) , 10.1063/1.2800290
Yen-Kuang Kuo, Jih-Yuan Chang, Miao-Chan Tsai, Sheng-Horng Yen, Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers Applied Physics Letters. ,vol. 95, pp. 011116- ,(2009) , 10.1063/1.3176406