Suppression of electron overflow in 370-nm InGaN/AlGaN ultraviolet light emitting diodes with different insertion layer thicknesses
作者： C.K. Wang , Y.W. Wang , Y.Z. Chiou , S.H. Chang , J.S. Jheng
DOI: 10.1016/J.JCRYSGRO.2016.12.016
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摘要: Abstract In this study, the properties of 370-nm InGaN/AlGaN ultraviolet light emitting diodes (UV LEDs) with different thicknesses un-doped Al 0.3 Ga 0.7 N insertion layer (IL) between last quantum barrier and electron blocking (EBL) have been numerically simulated by Advance Physical Model Semiconductor Devices (APSYS). The results show that LEDs using high composition IL can effectively improve efficiency droop, output power, internal (IQE) compared to original structure. improvements optical are mainly attributed energy band discontinuity offset created IL, which increase potential height conduction suppress overflow from active region p-side layer.
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