Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes
作者： J. Hader , J. V. Moloney , S. W. Koch
DOI: 10.1063/1.3446889
关键词: Laser 、 Carrier generation and recombination 、 Diode 、 Voltage droop 、 Recombination 、 Quantum efficiency 、 Optoelectronics 、 Semiconductor laser theory 、 Materials science
摘要: It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of internal quantum efficiency in GaN-based laser diodes.
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