Origin of efficiency droop in GaN-based light-emitting diodes
作者： Min-Ho Kim , Martin F. Schubert , Qi Dai , Jong Kyu Kim , E. Fred Schubert
DOI: 10.1063/1.2800290
关键词:
摘要: … efficiency droop, found in GaInN ∕ GaN LEDs is unrelated to junction temperature. The radiative efficiency of GaInN LED … the external quantum efficiency of GaInN LEDs shows a strong …
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E. Fred Schubert, Light-Emitting Diodes: Light-Emitting Diodes ,(2006) , 10.1017/CBO9780511790546
Nitride semiconductor devices : principles and simulation Wiley-VCH Verlag GmbH & Co. KGaA. ,(2007) , 10.1002/9783527610723
Fabio Bernardini, Spontaneous and Piezoelectric Polarization: Basic Theory vs. Practical Recipes Nitride Semiconductor Devices: Principles and Simulation. pp. 49- 68 ,(2007) , 10.1002/9783527610723.CH3
I. V. Rozhansky, D. A. Zakheim, Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping Physica Status Solidi (a). ,vol. 204, pp. 227- 230 ,(2007) , 10.1002/PSSA.200673567
Katsushi Akita, Takashi Kyono, Yusuke Yoshizumi, Hiroyuki Kitabayashi, Koji Katayama, Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates Journal of Applied Physics. ,vol. 101, pp. 033104- ,(2007) , 10.1063/1.2432307
A.Y. Kim, W. G�tz, D.A. Steigerwald, J.J. Wierer, N.F. Gardner, J. Sun, S.A. Stockman, P.S. Martin, M.R. Krames, R.S. Kern, F.M. Steranka, Performance of high-power AlInGaN light emitting diodes Physica Status Solidi (a). ,vol. 188, pp. 15- 21 ,(2001) , 10.1002/1521-396X(200111)188:1<15::AID-PSSA15>3.0.CO;2-5
Kenji Funato, Shigeki Hashimoto, Katsunori Yanashima, Fumihiko Nakamura, Masao Ikeda, Residual strain dependence of optical characteristics in GaN layers grown on (0001) sapphire substrates Applied Physics Letters. ,vol. 75, pp. 1137- 1139 ,(1999) , 10.1063/1.124621
I. V. Rozhansky, D. A. Zakheim, Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping Physica Status Solidi (c). ,vol. 3, pp. 2160- 2164 ,(2006) , 10.1002/PSSC.200565366
A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Lavrinovich, Yu. T. Rebane, D. V. Tarkhin, Yu. G. Shreter, Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs Semiconductors. ,vol. 40, pp. 605- 610 ,(2006) , 10.1134/S1063782606050162
Amane Shikanai, Takashi Azuhata, Takayuki Sota, Shigefusa Chichibu, Akito Kuramata, Kazuhiko Horino, Shuji Nakamura, Biaxial strain dependence of exciton resonance energies in wurtzite GaN Journal of Applied Physics. ,vol. 81, pp. 417- 424 ,(1997) , 10.1063/1.364074