Microscopic analysis of optical gain in InGaN∕GaN quantum wells
作者： B. Witzigmann , V. Laino , M. Luisier , U. T. Schwarz , G. Feicht
DOI: 10.1063/1.2164907
关键词:
摘要: A microscopic theory is used to analyze optical gain in InGaN∕GaN quantum wells (QW). Experimental data are obtained from Hakki–Paoli measurements on edge-emitting lasers for different carrier densities. The simulations based the solution of kinetic Maxwell–Bloch equations, including many-body effects and a self-consistent treatment piezoelectric fields. results confirm validity QW description this material system with substantial inhomogeneous broadening due structural variation. They also give an estimate nonradiative recombination rate.
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