On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping
作者： Shaofei Zhang , Yukun Li , Saeed Fathololoumi , Hieu Pham Trung Nguyen , Qi Wang
DOI: 10.1063/1.4817834
关键词:
摘要: The optical performance of top-down etched InGaN/GaN nanorod light emitting diodes (LEDs) was studied using temperature variable photoluminescence spectroscopy with a 405 nm pump laser. Efficiency droop is measured from such structures, which further enhanced decreasing temperature. Through detailed rate equation analysis the temperature-dependent carrier distribution and modeling quantum efficiency, this unique phenomenon can be largely explained by interplay dynamics between radiative recombination in localized states nonradiative via surface states/defects.
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