Minority carrier diffusion length and lifetime in GaN
作者： Z. Z. Bandić , P. M. Bridger , E. C. Piquette , T. C. McGill
DOI: 10.1063/1.121581
关键词:
摘要: Electron beam induced current measurements on planar Schottky diodes on undoped GaN grown by metalorganic chemical vapor deposition are reported. The minority carrier diffusion …
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