Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy
作者： J. M. Van Hove , R. Hickman , J. J. Klaassen , P. P. Chow , P. P. Ruden
DOI: 10.1063/1.118838
关键词:
摘要: GaN p–i–n photovoltaic diode arrays were fabricated from epitaxial films deposited on sapphire by molecular beam epitaxy. Peak UV responsivity was 0.11 A/W at 360 nm, corresponding to 48% internal quantum efficiency. Visible rejection over 400–800 nm 3–4 orders of magnitude. Typical pulsed time response measured 8.2 μs. Spectral modeling performed analyze the photocurrent contributions photogenerated carrier drift in depletion region and minority diffusion p n layers. With model, a maximum efficiency 55% calculated for structure.
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