Modeling of GaN electron mobility
作者： I.M. Abdel-Motaleb , R.Y. Korotkov
DOI: 10.1109/EDMO.2003.1259962
关键词:
摘要: An analytical model for temperature-dependent electron-mobility in GaN has been developed. Scattering mechanisms by ionized impurities, dislocations, acoustic phonons, and optical phonons where considered. Using this model, the behavior of electron mobility as a function carrier concentration temperature was accurately predicted. Samples grown using metalorganic chemical vapor deposition (MOCVD) molecular beam epitaxy (MBE) were used to validate model. The results show that can, accurately, predict regardless method growth used.
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