作者: I. A. Lamkin , M. Y. Andreev , S. A. Tarasov , A. V. Solomonov , S. Yu. Kurin
DOI: 10.1109/EICONRUSNW.2015.7102225
关键词:
摘要: A technology of ultraviolet photodiodes based on Me-AlGaN Schottky barrier separating in UVA, UVB and UVC spectral ranges was proposed. The effect altering the AlGaN soild solution composition long-wavelength edge photosensitivity fabricated photodetector studied. Influence metal value structures examined.