Optical Gain Spectra of a (0001) InGaN Green Laser Diode
作者： Mitsuru Funato , Yoon Seok Kim , Yoshiaki Ochi , Akio Kaneta , Yoichi Kawakami
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摘要: The optical gain properties of InGaN-based green (512 nm) laser diodes fabricated on (0001) GaN substrates are investigated. Fitting simulations to the experimental spectra provides a Gaussian inhomogeneous broadening 95 meV, an confinement factor 0.006, and internal loss as low ~10/cm. remarkable suppression compensate for confinement, leading threshold current density 2.75 kA/cm2. suppressed inhomogeneity contributes highly linear increase with injection carrier, while results in relatively differential mode gain.
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K. Kojima, M. Funato, Y. Kawakami, S. Nagahama, T. Mukai, H. Braun, U. T. Schwarz, Gain suppression phenomena observed in InxGa1-xN quantum well laser diodes emitting at 470 nm Applied Physics Letters. ,vol. 89, pp. 241127- ,(2006) , 10.1063/1.2404971
Shimpei Takagi, Yohei Enya, Takashi Kyono, Masahiro Adachi, Yusuke Yoshizumi, Takamichi Sumitomo, Yuichiro Yamanaka, Tetsuya Kumano, Shinji Tokuyama, Kazuhide Sumiyoshi, Nobuhiro Saga, Masaki Ueno, Koji Katayama, Takatoshi Ikegami, Takao Nakamura, Katsunori Yanashima, Hiroshi Nakajima, Kunihiko Tasai, Kaori Naganuma, Noriyuki Fuutagawa, Yoshiro Takiguchi, Tatsushi Hamaguchi, Masao Ikeda, High-Power (over 100 mW) Green Laser Diodes on Semipolar {2021} GaN Substrates Operating at Wavelengths beyond 530 nm Applied Physics Express. ,vol. 5, pp. 082102- ,(2012) , 10.1143/APEX.5.082102
Mitsuru Funato, Yoon Seok Kim, Takayuki Hira, Akio Kaneta, Yoichi Kawakami, Takashi Miyoshi, Shin-ichi Nagahama, Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure Applied Physics Express. ,vol. 6, pp. 111002- ,(2013) , 10.7567/APEX.6.111002
Basil W. Hakki, Thomas L. Paoli, Gain spectra in GaAs double−heterostructure injection lasers Journal of Applied Physics. ,vol. 46, pp. 1299- 1306 ,(1975) , 10.1063/1.321696
T. Lermer, A. Gomez-Iglesias, M. Sabathil, J. Müller, S. Lutgen, U. Strauss, B. Pasenow, J. Hader, J. V. Moloney, S. W. Koch, W. Scheibenzuber, U. T. Schwarz, Gain of blue and cyan InGaN laser diodes Applied Physics Letters. ,vol. 98, pp. 021115- ,(2011) , 10.1063/1.3541785
Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, M. R. Krames, Auger recombination in InGaN measured by photoluminescence Applied Physics Letters. ,vol. 91, pp. 141101- ,(2007) , 10.1063/1.2785135
Akio Kaneta, Yoon-Seok Kim, Mitsuru Funato, Yoichi Kawakami, Yohei Enya, Takashi Kyono, Masaki Ueno, Takao Nakamura, Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a $\{20\bar{2}1\}$ GaN Substrate Probed by Scanning Near-Field Optical Microscopy Applied Physics Express. ,vol. 5, pp. 102104- ,(2012) , 10.1143/APEX.5.102104
Yoon Seok Kim, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami, Takashi Kyono, Masaki Ueno, Takao Nakamura, Optical Gain Spectroscopy of a Semipolar {2021}-Oriented Green InGaN Laser Diode Applied Physics Express. ,vol. 4, pp. 052103- ,(2011) , 10.1143/APEX.4.052103
K. Kojima, Ulrich T. Schwarz, M. Funato, Y. Kawakami, S. Nagahama, T. Mukai, Optical gain spectra for near UV to aquamarine (Al,In)GaN laser diodes. Optics Express. ,vol. 15, pp. 7730- 7736 ,(2007) , 10.1364/OE.15.007730
J. Hader, J. V. Moloney, S. W. Koch, Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes Applied Physics Letters. ,vol. 96, pp. 221106- ,(2010) , 10.1063/1.3446889