Auger recombination in InGaN measured by photoluminescence
作者： Y. C. Shen , G. O. Mueller , S. Watanabe , N. F. Gardner , A. Munkholm
DOI: 10.1063/1.2785135
关键词: Auger 、 Quantum efficiency 、 Materials science 、 Light-emitting diode 、 Photoluminescence 、 Auger effect 、 Current density 、 Quantum well 、 Optoelectronics 、 Atomic physics 、 Diode
摘要: The Auger recombination coefficient in quasi-bulk In x Ga 1− x N (x∼ 9%–15%) layers grown on GaN (0001) is measured by a photoluminescence technique. The samples vary in InN composition, thickness, and threading dislocation density. Throughout this sample set, the measured Auger coefficient ranges from 1.4× 10− 30 to 2.0× 10− 30 cm 6 s− 1. The authors argue that an Auger coefficient of this magnitude, combined with the high carrier densities reached in blue and green In Ga N∕ Ga N (0001) quantum well light-emitting …
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