Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering
作者： Mark J. Galtrey , Rachel A. Oliver , Menno J. Kappers , Colin J. Humphreys , Debbie J. Stokes
DOI: 10.1063/1.2431573
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摘要: An InxGa1−xN∕GaN multiple quantum well (MQW) structure that exhibited bright photoluminescence was examined with the three-dimensional atom probe. The wells were clearly imaged and indium fraction x measured to be 0.19±0.01, in good agreement x-ray diffraction measurements. distribution of MQWs analyzed: no evidence for either high concentration regions or clustering found, contrast many transmission electron microscopy studies literature. authors conclude is not necessary luminescence InGaN.
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