The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy
作者： T. M. Smeeton , C. J. Humphreys , J. S. Barnard , M. J. Kappers
DOI: 10.1007/S10853-006-7876-X
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摘要: High-resolution transmission electron microscope (HRTEM) lattice fringe images and parameter maps are used to reveal the rapid modification of InGaN quantum wells by beam in a TEM. Images acquired within seconds first irradiating region well do not exhibit strong nanometre-scale strain contrast which has been reported signify presence very indium-rich regions wells. However, after short period irradiation relatively low current density, specimen could be interpreted as indicating these indium “clusters”. The damage is shown occur for grown our lab those commercial blue light emitting diode (LED) TEM specimens prepared only using mechanical polishing. Possible mechanisms discussed we make suggestions what may cause exciton localisation that contain gross composition fluctuations.
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