Temperature and excitation dependence of the photo-induced excess conductivity in doping modulated amorphous silicon
作者： J. Kakalios , H. Fritzsche
DOI: 10.1016/0022-3093(85)90850-6
关键词: Excitation 、 Conductivity 、 Light intensity 、 Doping 、 Boron 、 Optoelectronics 、 Materials science 、 Amorphous silicon 、 Power law 、 Power law exponent
摘要: Abstract The dependence of the photo-induced excess conductivity in doping modulated amorphous silicon on exposure time, light intensity, and temperature has been investigated. Our results can be explained by a novel defect center associated with boron. growth is thermally activated displays power law intensity where time exponent increases intensity.
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sci-hub.se 参考文章(4)
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