Temperature dependence of photoconductivity of amorphous silicon doping multilayers
作者： D.H. Zhang , D. Haneman
DOI: 10.1016/0022-3093(89)90585-1
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摘要: Abstract Measurements of conductivity in the dark, light, and persistent conductivity, have been made on a variety doping modulated multilayers compensated films. A completely different behaviour for films is found. The results are explained terms P-B centers acting as deep traps with an activation energy barrier greater than 0.37 eV when functioning recombination centers.
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