摘要: Dan Haneman died in Sydney as a result of Parkinson's disease on 13 December 2002. He made fundamental contributions to the study clean semiconductor surfaces from beginning such studies 1950s. Perhaps his most important were model for and invention novel experimental methods produced by cleavage ultrahigh vacuum. Numerous PhD students benefited careful supervision over many years.
sci-hub.se 参考文章(177)
R.U. Khokhar, D. Haneman, Recombination radiation from vacuum splits in GaAs Solid-State Electronics. ,vol. 13, pp. 439- 440 ,(1970) , 10.1016/0038-1101(70)90154-1
D. Haneman, N. McAlpine, Light emission from Si cleaved and gas-covered surfaces Applied Surface Science. pp. 111- 118 ,(1991) , 10.1016/0169-4332(91)90314-A
J. Yuan, D. Haneman, I. Andrienko, W. Li, Electroluminescence from mechanically damaged oxidized silicon Journal of Applied Physics. ,vol. 83, pp. 4385- 4388 ,(1998) , 10.1063/1.367197
D.G. Li, N.S. McAlpine, D. Haneman, Progression of cleavage in Si, Ge, and GaAs Applied Surface Science. pp. 553- 559 ,(1993) , 10.1016/0169-4332(93)90718-Q
R. J. Nemanich, D. Haneman, Strain of laser annealed silicon surfaces Applied Physics Letters. ,vol. 40, pp. 785- 787 ,(1982) , 10.1063/1.93259
V. A. Kuznetsov, D. Haneman, HIGH TEMPERATURE COEFFICIENT OF RESISTANCE IN VANADIUM OXIDE DIODES Review of Scientific Instruments. ,vol. 68, pp. 1518- 1520 ,(1997) , 10.1063/1.1147640
R. U. Khokhar, D. Haneman, Atomic Mismatch on Closure of Controlled Partial Splits in Silicon Journal of Applied Physics. ,vol. 43, pp. 317- 319 ,(1972) , 10.1063/1.1661114
J. Szot, D. Haneman, Liquid-junction cells with thin-film CuInSe2 Journal of Applied Physics. ,vol. 59, pp. 2249- 2251 ,(1986) , 10.1063/1.336369
G.J. Russell, D. Haneman, Oxygen adsorption on vacuum cleaved GaAs at liquid nitrogen temperatures by LEED Surface Science. ,vol. 27, pp. 362- 366 ,(1971) , 10.1016/0039-6028(71)90042-2
D. Haneman, Review of Electron Paramagnetic Resonance Investigations of Semiconductor Surfaces Japanese Journal of Applied Physics. ,vol. 13, pp. 371- ,(1974) , 10.7567/JJAPS.2S2.371