Progression of cleavage in Si, Ge, and GaAs
作者： D.G. Li , N.S. McAlpine , D. Haneman
DOI: 10.1016/0169-4332(93)90718-Q
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摘要: Abstract The time of crack travel across thin crystalline wafers has been measured for Si, Ge, and GaAs, by monitoring the resistance cleavage. Contrary to supposition, times velocities vary greatly, up two orders magnitude, ostensibly similar conditions. In cases Si Ge cracks can pause partially heal before final separation. healing phenomena are only consistent with cleavage surface models that feature reconstructions reversible on recontact. discussed.
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