Transport gap in vertical devices made of incommensurately misoriented graphene layers

摘要: By means of atomistic tight-binding calculations, we investigate the transport properties vertical devices made two incommensurately misoriented graphene layers. For a given direction (Ox-axis), define classes rotated lattice distinguished by difference in symmetry and, hence, Brillouin zone. In particular, these correspond to different cases where position their Dirac cones k y -axis is determined differently, i.e. or (L periodic length along Oy axis). As consequence, layers classes, misalignment between left and right sections opens finite energy-gap conductance that can reach few hundreds meV. We also show strain engineering be used further enlarge gap diminish sensitivity on twist angle commensurateness layer stack.