Electrical Properties of CuI Thin Films

摘要: Hole concentration of CuI thin film decreased but Hall mobility increased with the rise reaction temperature copper films iodine vapor. The heat-treatment in vacuum brings out decrease hole because escape excess from film. Oxygen diffuses into bulk Cut at high temperatures and raises conductance activation energy for diffusion was determined as 0.82 eV. Water vapor is chemisorbed on surface lowers room temperature.