Electronic structures of CuI interlayers in organic electronic devices: An interfacial studies of N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine/CuI and tris-(8-hydroxyquinolinato)aluminum/CuI

摘要: Abstract Electronic structures with the copper iodide (CuI) interlayer in organic electronic devices were measured and its strong electron-withdrawing properties revealed. In situ ultraviolet X-ray photoelectron spectroscopy showed interfacial of N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (NPB)/CuI/indium–tin-oxide (ITO) tris-(8-hydroxyquinolinato)aluminum (Alq3)/CuI/ITO as a representative hole- electron-transport material. The large work function CuI induces electron transfer from both molecules ITO to CuI. As result, dramatically reduces hole injection barrier (HIB) NPB Alq3 layers. Notably, assists molecular ordering layer, which would increase intermolecular interaction, so enhance charge transport properties. Simultaneous enhancement HIB improve device performance.