Investigation of the Nanostructures Formation in the Irradiated by γ-Quanta Single-Crystal Silicon with Ultrasonic Method

摘要: It’s determined that a phasic dynamics of deformation strengthening single-crystal silicon irradiated by γ-quanta (with energy ~1.27 MeV) in the range radiation absorbed doses from 102 up to 109 rad internal friction measurement with widely known ultrasonic resonance method. We have detected appearance maximum on dependence (Q-1) dose at 5 × 105 specimens p - Si density dislocations more than 103 cm-2. The instability dislocation structures has been established 106 rad, due formation and accumulation crystal lattice point like continuous defects. On time Q-1(t) per 1.5 2 hours after irradiation, which position depends radiation. monotonic decrease was observed increase observation stopping specimen is connected decreasing defects densities as result their annihilation.