Epitaxial growth of indium antimonide films as studied in situ by electron diffraction

摘要: Abstract A high energy electron diffraction system is described which especially designed for in situ studies of the growth, structure and orientation thin films formed by cathodic sputtering or vacuum deposition. The epitaxial growth indium antimonide on cleaved (001) faces rocksalt has been studied use this system. An amorphous film at room temperature but it transforms into a crystalline about 150°C. degree increases as depositions are made increasingly higher substrate temperatures. Complete epitaxy obtained above 250°C. It observed that always preceded formation very layer during earliest observable growth. tetragonal, growing epitaxially onto even temperature. parallel relationship between develops, accompanied 〈111〉 twinning with increasing thickness. confirm occurrence hexagonal polymorph initial stage