Organometallic vapor deposition of epitaxial ZnSe films on GaAs substrates
作者： W. Stutius
DOI: 10.1063/1.90454
关键词: Intensity (heat transfer) 、 Photoluminescence 、 Epitaxy 、 Inorganic chemistry 、 Wavelength 、 Chemical vapor deposition 、 Trapping 、 Luminescence 、 Materials science 、 Optoelectronics 、 Combustion chemical vapor deposition
摘要: Smooth epitaxial single‐crystalline layers of (100) ZnSe on GaAs substrates are grown by a new low‐pressure low‐temperature organometallic chemical vapor deposition process. The strong band‐edge photoluminescence peak and the absence any substantial luminescence intensity at longer wavelengths indicate an deep trapping centers which is typically not observed in other CVD growth.
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