Integrated circuit having a magnetic tunnel junction device and method
作者： Ulrich Klostermann , Franz Kreupl
DOI:
关键词: Nanotechnology 、 Graphene 、 Barrier layer 、 Tunnel junction 、 Materials science 、 Pyrolytic carbon 、 Integrated circuit 、 Tunnel magnetoresistance 、 Carbon 、 Graphite 、 Optoelectronics
摘要: An integrated circuit having a magnetic tunnel junction and method. One embodiment provides an is provided. The includes barrier layer. layer carbon, pyrolytic or graphene, graphite.
lens.org 参考文章(22)
Zheng Gao, Sining Mao, Khoung Tran, Jian Chen, Janusz Nowak, Tunneling barrier material for a magnetic recording head ,(2002)
Mark William Covington, Magnetic tunnel junction using nanoparticle monolayers and applications therefor ,(2001)
Matthew J. Carey, Bruce A. Gurney, Yongho Ju, Low-resistance high-magnetoresistance magnetic tunnel junction device with improved tunnel barrier ,(2002)
Stuart Stephen Papworth Parkin, Roy Edwin Scheuerlein, Douwe Johannes Monsma, Magnetic random access memory using a non-linear memory element select mechanism ,(2000)
Srinivas V. Pietambaram, Renu W. Dave, Jijun Sun, Jon M. Slaughter, Synthetic antiferromagnet structures for use in MTJs in MRAM technology ,(2003)
K. Ludwig, J. Hauch, R. Mattheis, K.-U. Barholz, G. Rieger, Adapting GMR sensors for integrated devices Sensors and Actuators A-physical. ,vol. 106, pp. 15- 18 ,(2003) , 10.1016/S0924-4247(03)00095-5
Dexin Wang, James M. Daughton, Zhenghong Qian, Cathy Nordman, Mark Tondra, Art Pohm, Spin dependent tunneling junctions with reduced Neel coupling Journal of Applied Physics. ,vol. 93, pp. 8558- 8560 ,(2003) , 10.1063/1.1556982
L. Altimime, G. Mueller, R. Leuschner, U.K. Klostermann, H. Park, F. Dahmani, R. Dittrich, C. Grigis, K. Hernan, S. Mege, C. Park, M.C. Clech, G. Y. Lee, S. Bournat, Thermal Select MRAM with a 2-bit Cell Capability for beyond 65 nm Technology Node international electron devices meeting. pp. 1- 4 ,(2006) , 10.1109/IEDM.2006.346986
U.K. Klostermann, M. Angerbauer, U. Gruning, F. Kreupl, M. Ruhrig, F. Dahmani, M. Kund, G. Muller, A Perpendicular Spin Torque Switching based MRAM for the 28 nm Technology Node international electron devices meeting. pp. 187- 190 ,(2007) , 10.1109/IEDM.2007.4418898
M. Ruhrig, R. Seidel, L. Bar, G. Rupp, M. Vieth, J. Wecker, Angular sensor using tunneling magnetoresistive junctions with an artificial antiferromagnet reference electrode and improved thermal stability IEEE Transactions on Magnetics. ,vol. 40, pp. 101- 104 ,(2004) , 10.1109/TMAG.2003.821571