Low-resistance high-magnetoresistance magnetic tunnel junction device with improved tunnel barrier

摘要: A low resistance magnetic tunnel junction device, such as a memory cell in nonvolatile random access (MRAM) array or magnetoresistive read head recording disk drive, has titanium oxynitride (TiOxNy) layer the single-layer barrier one of layers bilayer barrier. In other is an oxide nitride Al, Si, Mg, Ta, [[Si]] and Y, Al2O3, AlN, Si3N4, MgO, Ta2O5, TiO2, Y2O3. The Ti material can be alloyed with known metals, Al to produce barriers TiAlOxNy TiMgOxNy compositions.