Substrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same
作者： Makoto Imamura , Yugaku Abe , Yoshiyuki Hirose , Shinichi Yamagata , Yoshishige Takano
DOI:
关键词: Alloy 、 Substrate (electronics) 、 Composite number 、 Silicon carbide 、 Sintering 、 Metallurgy 、 Thermal expansion 、 Semiconductor device 、 Aluminium 、 Materials science
摘要: To provide a substrate material made of an aluminum/silicon carbide composite alloy which has thermal conductivity 100 W/m×K or higher and expansion coefficient 20×10−6/° C. lower is lightweight compositionally homogeneous. A ally comprises Al—SiC composition parts non part dispersed therein from 10 to 70% by weight silicon particles, in the fluctuations concentration are within 1% weight. The produced sintering compact starting powder at temperature not than 600° non-oxidizing atmosphere.
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