作者: Satoru Ogihara , Yukio Takeda
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摘要: The present invention provides a highly thermal conductive, electrical insulating ceramic body having at least 90% of theoretical density and comprising 20 to 40% by weight silicon carbide, the balance being substantially aluminum nitride, carbide containing not more than 0.1 sum total boron, nitrogen 0.2% iron, titanium, vanadium, chromium nickel, nitride 1% oxygen 0.5% silicon, iron magnesium, sintered conductivity 20° C. 250 W/m.°K, an resistivity 1010 Ω. cm, dielectric strength kV/cm, constant 1 MHz 10, bending 400 MPa fracture toughness 5MN/m3/2. can be used as substrate for semi-conductor device, device using has good heat radiation. radiation characteristic.