Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering
作者： Sung C. Kim , Trung T. Doan , Chris C. Yu
DOI:
关键词: Substrate (electronics) 、 Ion implantation 、 Sputtering 、 Passivation 、 Metallurgy 、 Optoelectronics 、 Ceramic 、 Layer (electronics) 、 Thin film 、 Nitride 、 Materials science
摘要: A process for depositing a thin film of aluminum nitride (AlN) includes sputtering an target with energetic nitrogen ions generated in plasma. single gas (i.e. nitrogen) is used as both the reactive and gas. The especially adapted forming etchstop layer use contact vias through dielectric semiconductor manufacture. also useful manufacture that may be passivation layer, ceramic packaging material, mask ion implantation, substrate material hybrid circuits, high bandgap window GaAs solar cells.
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