Gallium arsenide power monolithic microwave integrated circuit
作者： Steven C. Lazar , Joseph M. Duffalo
DOI:
关键词: Monolithic microwave integrated circuit 、 Common source 、 Optoelectronics 、 Common base 、 FET amplifier 、 RF power amplifier 、 Materials science 、 Common gate 、 Electrical engineering 、 Fully differential amplifier 、 Amplifier
摘要: A gallium arsenide monolithic microwave integrated circuit amplifier comprising a first stage having common gate field effect transistor to provide matching of the input impedance, second source class gain, and third open drain B gain for amplifier. This provides greater than 25 decibels over frequency band 400 Hz-1.5 GHz.
lens.org 参考文章(1)
Aditya K. Gupta, J. Aiden Higgins, Monolithic microwave amplifier having active impedance matching ,(1980)