Optical lithography: Lithography at EUV wavelengths

作者: Greg Tallents , Erik Wagenaars , Geoff Pert

DOI: 10.1038/NPHOTON.2010.277

关键词: OpticsComputational lithographyPhotolithographyExtreme ultraviolet lithographyMaterials scienceOptoelectronicsImmersion lithographyLithographyX-ray lithographyNext-generation lithographyMaskless lithography

摘要: Extreme-ultraviolet (EUV) lithography at 13.5 nm is expected to be introduced in high-volume semiconductor chip production over the next three years. Research is now underway to investigate sub-10-nm light sources that could support lithography over the coming decades.

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