Beyond EUV lithography: a comparative study of efficient photoresists' performance.

摘要: Extreme ultraviolet (EUV) lithography at 13.5 nm is the main candidate for patterning integrated circuits and reaching sub-10-nm resolution within next decade. Should photon-based still be used smaller feature sizes, beyond EUV (BEUV) 6.x nm wavelength an option that could potentially meet rigid demands of semiconductor industry. We demonstrate simultaneous characterization resolution, line-edge roughness, sensitivity distinct photoresists BEUV compare their properties when exposed to under same conditions. By using interference these wavelengths, we show possibility 22 nm characterize impact higher energy photons on roughness exposure latitude. observe high photoresist performance its chemical content overall Z-parameter criterion. Interestingly, inorganic have much better BEUV, while organic chemically-amplified would need serious adaptations being such wavelength. Our results immediate implications deeper understanding radiation chemistry novel soft X-ray spectra.