Helium ion beam lithography (HIBL) using HafSOx as the resist

摘要: Helium ion beam lithography (HIBL) is a novel alternative lithographic technique with the capacity of fabricating highresolution and high-density features. Only limited research has been performed exploring HIBL to date. HafSOx (Hf(OH)4–2x−2y(O2)x(SO4)y·qH2O) negative-tone inorganic resist that one several candidate materials for extreme ultraviolet (EUVL) e-beam (EBL), demonstrated show high resolution, moderate sensitivity low line-edge roughness (LER) in both EUVL EBL. To date, no work on reported. In this study, we tested as an achieved compared EBL turn-on dose D100 ~ 2-4 μC/cm2. We obtained sub-10 nm line widths LER. A simple Monte Carlo simulation suggests ionizing excitation accounts most incident He ions’ energy loss.