Ion beam lithography with gold and silicon ions

摘要: Different ion species deliver a different material sputtering yield and implantation depth, thus enabling focused beam (FIB) fabrication for diverse applications. Using newly developed FIB milling with double charged \(\hbox {Au}^{2+}\) {Si}^{2+}\) ions, has been carried out on Au-sputtered films to define arrays of densely packed nanoparticles supporting optical extinction peaks at visible-IR wavelengths determined by the size, shape, proximity nanoparticles. Results are qualitatively compared {Ga}^{+}\) milling. A possibility use such tailor etching rate silicon is also demonstrated.