Dielectrics containing at least one of a refractory metal or a non-refractory metal
作者： Leonard Forbes , Arup Bhattacharyya , Kie Y. Ahn
DOI:
关键词: Monolayer 、 Tantalum 、 Composite material 、 Electronic systems 、 Dielectric 、 Metal 、 Inorganic chemistry 、 Materials science 、 Insulator (electricity) 、 Atomic layer deposition 、 Refractory metals
摘要: Electronic apparatus and methods of forming the electronic may include one or more insulator layers having a refractory metal non-refractory for use in variety systems devices. Embodiments can tantalum aluminum oxynitride film. The film be structured as monolayers. formed using atomic layer deposition. Metal electrodes disposed on dielectric containing
google.co.in 参考文章(324)
David L. Trawick, David A. Courtright, Integrated circuit having reprogramming cell ,(1996)
Leonard Forbes, Kie Ahn, Atomic layer deposited lanthanum aluminum oxide dielectric layer ,(2004)
Leonard Forbes, Kie Y. Ahn, Deposition of ZrAION films ,(2006)
Hiroshi Oji, Capacitor for a semiconductor device ,(1994)
Shunpei Yamazaki, Yasuyuki Arai, Semiconductor device and method for its fabrication ,(2002)
Jaeyong Park, Shiraiwa Hidehiko, Arvind Halliyal, Method of formation of semiconductor resistant to hot carrier injection stress ,(2003)
Rama I. Hegde, Amit Nangia, Philip J. Tobin, Process for forming a structure ,(2000)
Hideki Hirata, Yoshitomo Tanaka, Masaki Aoshima, Koji Mishima, Hajime Utsunomiya, Hitoshi Arai, Hiroyasu Inoue, Optical recording/reproducing method and optical recording medium ,(2003)
Mark R. Visokay, Luigi Colombo, Manuel A. Quevedo-Lopez, James J. Chambers, Top surface roughness reduction of high-k dielectric materials using plasma based processes ,(2003)
Leonard Forbes, Kie Y. Ahn, Iridium/zirconium oxide structure ,(2005)