Contact for a semiconductor light emitting device
作者： John E. Epler , Aurelien J.F. David
DOI:
关键词: Optoelectronics 、 Semiconductor structure 、 Light emitting device 、 Materials science 、 Conductive materials 、 Semiconductor 、 Layer (electronics) 、 Electrical conductor
摘要: Embodiments of the invention include a semiconductor structure comprising III-nitride light emitting layer disposed between an n-type region and p-type region. A contact on includes transparent conductive material in direct with region, reflective metal layer, insulating layer. In plurality openings material, is
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