作者: Teresa B. Sapirman , Minh Huu Le , Jianhua Hu
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摘要: The electrical and optical performance of silver LED reflective contacts in III-V devices such as GaN LEDs is limited by silver's tendency to agglomerate during annealing processes corrode on contact with silver-reactive materials elsewhere the device (for example, gallium or aluminum). Agglomeration reaction are prevented, crystalline morphology layer may be optimized, forming a diffusion-resistant transparent conductive between source silver-reacting metal, (2) doping for improved adhesion adjacent layers, (3) titanium, which some embodiments prevents agglomeration promotes crystallization preferred orientation.