Method for fabricating oxides/semiconductor interfaces
作者： Georgios Vellianitis
DOI:
关键词: Optoelectronics 、 Oxide 、 Inorganic chemistry 、 Gate oxide 、 Compacted oxide layer glaze 、 Materials science 、 Semiconductor 、 Oxide thin-film transistor 、 Oxidizing agent 、 Atomic layer deposition 、 Layer (electronics)
摘要: By depositing a layer of oxidizing metal on the semiconductor surface first and then high-k oxide material over by an atomic deposition, is formed at interface between substrate prevents formation undesirable low-k semiconductor/high-k interface.
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