Semiconductor structure in which film including germanium oxide is provided on germanium layer, and method for manufacturing semiconductor structure
作者： Akira Toriumi , Toshiyuki Tabata , Tomonori Nishimura , Choong Hyun Lee , Cimang Lu
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摘要: A semiconductor structure includes: a germanium layer; and first insulating film that is formed on an upper surface of the layer, primarily contains oxide substance having oxygen potential lower than oxide, has physical thickness 3 nm or less; wherein half width frequency to height in 1 μm square area layer 0.7 less.
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