Ge-based nmos device and method for fabricating the same
作者： Xing Zhang , Yue Guo , Zhiqiang Li , Xia An , Ru Huang
DOI:
关键词: Schottky barrier 、 Dielectric 、 Substrate (electronics) 、 Silicon 、 NMOS logic 、 Schottky diode 、 Optoelectronics 、 Germanium oxide 、 Materials science 、 Fabrication
摘要: The embodiments of the present invention provide a Ge-based NMOS device structure and method for fabricating same. By using method, double dielectric layers germanium oxide (GeO 2 ) metal are deposited between source/drain region substrate. not only reduces electron Schottky barrier height metal/Ge contact, but also improves current switching ratio therefore, it will improve performance transistor. In addition, fabrication process is very easy completely compatible with silicon CMOS process. As compared conventional in can easily effectively
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