Rare earth metal surface-activated plasma doping on semiconductor substrates

摘要: Methods of doping semiconductor substrates using deposition a rare earth metal-containing film such as an yttrium-containing film, and annealing techniques are provided herein. Rare films deposited gas, liquid, or solid precursors without bias may be conformally. Some embodiments involve plasma. Substrates annealed at temperatures less than about 500° C.