Embedded memory cell and method of manufacturing same

作者: Brian S. Doyle , Gilbert Dewey , Niloy Mukherjee , Dinesh Somasekhar , Jack T. Kavalieros

DOI:

关键词:

摘要: An embedded memory cell includes a semiconducting substrate (110), transistor (120) having source/drain region (121) at least partially in the substrate, and capacitor (130) substrate. The first electrode (131) second (132) that are electrically isolated from each other by insulating material (133). is connected to of transistor.

参考文章(39)
Fang-Cheng Chen, Haur-Ywh Chen, Yuan-Hung Chiu, Hsien-Kuang Chiu, Hun-Jan Tao, Method of fabricating a mosfet device with metal containing gate structures ,(2002)
Leland Chang, Vivek Subramanian, Chenming Hu, Xuejue Huang, Tsu-Jae King, Yang-Kyu Choi, Wen-Chin Lee, Nick Lindert, Jeffrey Bokor, Jakub Tadeusz Kedzierski, Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture ,(2000)
Jeffrey P. Gambino, Jed H. Rankin, Jerome B. Lasky, Fin field effect transistor with self-aligned gate ,(2001)
Zoran Krivokapic, Bin Yu, Judy Xilin An, Shibly S. Ahmed, Srikanteswara Dakshina-Murthy, HaiHong Wang, Semiconductor device having a u-shaped gate structure ,(2002)