DRAM with high K dielectric storage capacitor and method of making the same
作者： Shrinivas Govindarajan
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摘要: A memory cell is fabricated by forming a first capacitor electrode including silicon. metal layer formed in physical contact with the electrode. The from material having high affinity for oxygen and melting point above about 1000° C. of K dielectric layer. has constant greater than 5. conductive over An interface between layer/silicon body modified performing an annealing step. transistor also to be electrically coupled one or
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