Gate stack structure with oxygen gettering layer
作者： Michael A. Gribelyuk , Vamsi K. Paruchuri , Michael P. Chudzik , Bruce B. Doris , Dae-Gyu Park
DOI:
关键词: Materials science 、 Gate dielectric 、 Substrate (electronics) 、 Metal gate 、 Nitride 、 Transistor 、 Dielectric 、 Electronic engineering 、 Layer (electronics) 、 Optoelectronics 、 Gate oxide
摘要: A transistor has a channel region in substrate and source drain regions the on opposite sides of region. gate stack is formed above This comprises an interface layer contacting substrate, high-k dielectric (having constant 4.0) (on) layer. Nitrogen rich first metal Nitride contacts (is on) layer, second Finally, Polysilicon cap
lens.org 参考文章(15)
Katsuaki Asano, Shun Mitarai, Akihiko Ochiai, Yasuyuki Ito, Oxygen diffusion blocking semiconductor capacitor ,(2000)
Dong Yeon Park, Eui Joon Yoon, Dong il Chun, Dong Su Lee, Hyun Jung Woo, Apparatus and methods of depositing a platinum film with anti-oxidizing function over a substrate ,(1998)
Hong-Jyh Li, CMOS Transistor With Dual High-k Gate Dielectric and Method of Manufacture Thereof ,(2012)
Shrinivas Govindarajan, DRAM with high K dielectric storage capacitor and method of making the same ,(2006)
Hideyuki Noshiro, Masaaki Nakabayashi, Tetsuro Tamura, Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same ,(1996)
Bruce E Gnade, Scott R Summerfelt, Texas Instruments Incorporated, Eric Thomas, Electrical connections to dielectric materials ,(2001)
Mark Doczy, Robert Chau, Markus Kuhn, Method for making a semiconductor device having a metal gate electrode ,(2003)
Vamsi K. Paruchuri, Michael P. Chudzik, Bruce B. Doris, Alessandro C. Callegari, Michelle L. Steen, Vijay Narayanan, Dual metal gate self-aligned integration ,(2005)
Suk-Jin Chung, Jin-Il Lee, Cha-young Yoo, Han-jin Lim, Kwang-Hee Lee, Wan-Don Kim, Capacitors including a cavity containing a buried layer ,(2004)
Young Limb, Heon Lee, Satish Athavale, Brian Lee, Young-Jin Park, Kilho Lee, Method to prevent oxygen out-diffusion from basrtio3 containing micro-electronic device ,(2001)