DRAM trench capacitor

摘要: The present invention relates to a process of fabricating semiconductor memory structures, particularly deep trench devices wherein temperature sensitive high dielectric constant material is incorporated into the storage node capacitor. Specifically, describes for forming capacitors after shallow isolation and gate conductor processing. This allows incorporation capacitor structure without causing decomposition that material. Furthermore, limits extent buried-strap outdiffusion, thus improving electrical characteristics array MOSFET.