Semiconductor device and method for making the same
作者： Pei-Ing Lee
DOI:
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摘要: A method for forming a semiconductor device is provided. The comprises providing substrate with recessed gates and deep trench capacitor devices therein. Protrusions of the upper portions are revealed. Spacers formed on sidewalls protrusions. Buried conductive material in spaces between spacers. substrate, spacers buried patterned to form parallel shallow trenches defining bit line contacts surface straps. layer dielectric trenches. Word lines across gates. Bit electrically connect without crossing straps, stack capacitors also
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