Semiconductor device and fabrication thereof
作者： Jar-Ming Ho , Chien-Li Cheng , Chin-Tien Yang , Shian-Jyh Lin
DOI:
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摘要: A method for forming a semiconductor device is disclosed, in which substrate comprising recessed gate provided, and protrusion of the protrudes surface substrate. spacer formed on sidewall gate. conductive structure overlying gate, wherein narrower than to expose portion An etching process utilized recess exposed form between spacer. line structure, fills portion.
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