Semiconductor structure having an integrated double-wall capacitor for embedded dynamic random access memory (edram) and method to form the same
作者： Brian S. Doyle , Robert S. Chau , Uday Shah , Charles C. Kuo , Satyarth Suri
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摘要: Semiconductor structures having integrated double-wall capacitors for eDRAM and methods to form the same are described. For example, an embedded capacitor includes a trench disposed in first dielectric layer above substrate. The has bottom sidewalls. A U-shaped metal plate is at of trench, spaced apart from second on conformal with sidewalls plate. top layer.
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